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4v drive nch + pch mosfet MP6M11 ? structure silicon n-channel mosfet/ silicon p-channel mosfet ? features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (mpt6). ? application switching ? packaging specifications package taping code tcr basic ordering unit (pieces) 1000 MP6M11 ? ? absolute maximum ratings (ta = 25 ? c) tr1 : n-ch tr2 : p-ch drain-source voltage v dss 30 ? 30 v gate-source voltage v gss 20 20 v continuous i d ? 3.5 ? 3.5 a pulsed i dp ? 12 ? 12 a continuous i s 1.6 ? 1.6 a pulsed i sp 12 ? 12 a w / total w / element channel temperature tch ? c range of storage temperature tstg ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. 2.0 ? 55 to ? 150 unit limits 1.4 150 total power dissipation p d symbol type source current (body diode) drain current parameter (1) tr1 source (2) tr1 gate (3) tr2 drain (4) tr2 source (5) tr2 gate (6) tr1 drain ? 1 esd protection diode ? 2 body diode mpt6 (duel) (1) (2) (3) (6) (5) (4) *1 *1 ? dimensions (unit : mm) ? inner circuit ?2 ?2 ?1 ?1 (1) (2) (3) (6) (5) (4) *2 1/10 2011.03 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
MP6M11 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss - - 10 ? av gs =20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma -7098 i d =3.5a, v gs =10v - 90 126 i d =3.5a, v gs =4.5v - 100 140 i d =3.5a, v gs =4.0v forward transfer admittance l y fs l 1.5 - - s v ds =10v, i d =3.5a input capacitance c iss - 85 - pf v ds =10v output capacitance c oss - 40 - pf v gs =0v reverse transfer capacitance c rss - 20 - pf f=1mhz turn-on delay time t d(on) -4-nsi d =1.75a, v dd 15v rise time t r -8-nsv gs =10v turn-off delay time t d(off) - 18 - ns r l =8.6 ? fall time t f -3-nsr g =10 ? total gate charge q g - 1.9 - nc i d =3.5a gate-source charge q gs - 0.8 - nc v dd 15v gate-drain charge q gd - 0.4 - nc v gs =5v *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =3.5a, v gs =0v *pulsed parameter conditions conditions parameter static drain-source on-state resistance r ds (on) m ? * * * * * * * * * * * * * * * * * 2/10 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6M11 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss - - 10 ? av gs =20v, v ds =0v drain-source breakdown voltage v (br)dss ? 30 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss - ? 1 ? av ds = ? 30v, v gs =0v gate threshold voltage v gs (th) ? 1.0 - ? 2.5 v v ds = ? 10v, i d = ? 1ma -7098 i d = ? 3.5a, v gs = ? 10v - 100 140 i d = ? 1.7a, v gs = ? 4.5v - 110 155 i d = ? 1.7a, v gs = ? 4.0v forward transfer admittance l y fs l 2.5 - - s i d = ? 3.5a, v ds = ? 10v input capacitance c iss - 410 - pf v ds = ? 10v output capacitance c oss - 55 - pf v gs =0v reverse transfer capacitance c rss - 55 - pf f=1mhz turn-on delay time t d(on) -9-nsi d = ? 1.7a, v dd ? 15v rise time t r - 18 - ns v gs = ? 10v turn-off delay time t d(off) - 35 - ns r l =8.8 ? fall time t f - 12 - ns r g =10 ? total gate charge q g - 4.2 nc i d = ? 3.5a gate-source charge q gs - 1.7 - nc v dd ? 15v gate-drain charge q gd - 1.1 - nc v gs = ? 5v *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 3.5a, v gs =0v *pulsed parameter conditions conditions m ? static drain-source on-state resistance r ds (on) parameter * * * * * * * * * * * * * * * * * 3/10 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6M11 ? electrical characteristic curves (ta=25 ? c) tr.1(nch) 0 0.5 1 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 v gs = 2.5v v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.8v ta=25 c pulsed fig.1 typical output characteristics( ) drain current : i d [a] drain - source voltage : v ds [v] 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 10 v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.5v v gs = 2.8v ta=25 c pulsed fig.2 typical output characteristics( ) drain - source voltage : v ds [v] drain current : i d [a] 0.001 0.01 0.1 1 10 0 1 2 3 v ds = 10v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig.3 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] 10 100 1000 0.1 1 10 v gs = 4.0v v gs = 4.5v v gs = 10v . ta=25 c pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 10 100 1000 0.1 1 10 v gs = 10v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 10 100 1000 0.1 1 10 v gs = 4.5v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 4/10 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6M11 10 100 1000 0.1 1 10 v gs = 4.0v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 0.1 1 10 0.01 0.1 1 10 v ds = 10v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig.8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : i d [a] 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig.9 reverse drain current vs. sourse - drain voltage source current : is [a] source - drain voltage : v sd [v] 0 50 100 150 200 0 2 4 6 8 10 i d = 3.5a i d = 1.75a ta=25 c pulsed fig.10 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds (on)[m ? ] gate - source voltage : v gs [v] 1 10 100 1000 0.01 0.1 1 10 t f t d(on) t d(off) ta=25 c v dd = 15v v gs =10v r g =10 pulsed t r fig.11 switching characteristics switching time : t [ns] drain - current : i d [a] 0 2 4 6 8 10 0 1 2 3 4 5 ta=25 c v dd = 15v i d = 3.5a pulsed fig.12 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : qg [nc] 5/10 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6M11 1 10 100 1000 0.01 0.1 1 10 100 c iss c rss ta=25 c f=1mhz v gs =0v c os fig.13 typical capacitance vs. drain - source voltage drain - source voltage : v ds [v] capacitance : c [pf] 0.01 0.1 1 10 100 0.1 1 10 100 p w = 10ms ta = 25 single pulse:1unit mounted on a ceramic board dc operation operation in this area is limited by r ds(on) (v gs =10v) p w =100us p w =1ms fig.14 maximum safe operating aera drain - source voltage : v ds [v] drain current : i d (a) 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 ta = 25 single pulse : 1unit rth(ch - a)(t) = r(t) rth(ch - a) rth(ch - a) = 89.3 /w fig.15 normalized transient thermal resistance vs. pulse width pulse width : pw(s) normarized transient thermal resistance : r (t) 6/10 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6M11 tr.2(pch) 0 1 2 3 0 0.2 0.4 0.6 0.8 1 v gs = - 2.5v v gs = - 10v v gs = - 4.5v v gs = - 4.0v v gs = - 2.8v v gs = - 3.0v ta=25 c pulsed fig.1 typical output characteristics( ) drain current : - i d [a] drain - source voltage : - v ds [v] 0 1 2 3 0 2 4 6 8 10 v gs = - 2.5v v gs = - 3.0v v gs = - 2.8v v gs = - 10v v gs = - 4.5v v gs = - 4.0v ta=25 c pulsed fig.2 typical output characteristics( ) drain - source voltage : - v ds [v] drain current : - i d [a] 0.001 0.01 0.1 1 10 0 1 2 3 v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.3 typical transfer characteristics drain current : - i d [a] gate - source voltage : - v gs [v] 10 100 1000 0.1 1 10 v gs = - 4.0v v gs = - 4.5v v gs = - 10v ta=25 c pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 10 100 1000 0.1 1 10 v gs = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 10 100 1000 0.1 1 10 v gs = - 4.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 7/10 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6M11 10 100 1000 0.1 1 10 v gs = - 4.0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 0.1 1 10 100 0.01 0.1 1 10 100 v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : - i d [a] 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.9 reverse drain current vs. sourse - drain voltage source current : - i s [a] source - drain voltage : - v sd [v] 0 50 100 150 200 250 0 5 10 15 i d = - 1.7a i d = - 3.5a ta=25 c pulsed fig.10 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds ( on )[m ? ] gate - source voltage : - v gs [v] 1 10 100 1000 0.01 0.1 1 10 t f t d(on) t d(off) t a =25 c v dd = - 15v v gs = - 10v r g =10 pulsed t r fig.11 switching characteristics switching time : t [ns] drain - current : - i d [a] 0 2 4 6 8 10 0 2 4 6 8 10 t a =25 c v dd = - 15v i d = - 3.5a r g =10 pulsed fig.12 dynamic input characteristics gate - source voltage : - v gs [v] total gate charge : qg [nc] 8/10 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6M11 10 100 1000 0.01 0.1 1 10 100 c iss c oss c rss t a =25 c f=1mhz fig.13 typical capacitance vs. drain - source voltage drain - source voltage : - v ds [v] capacitance : c [pf] 0.01 0.1 1 10 100 0.1 1 10 100 p w = 10ms t a = 25 c single pulse : 1unit mounted on a ceramic board dc operation operation in this area is limited by r ds(on) (v gs = - 10v) p w =100us p w =1ms fig.14 maximum safe operating aera drain - source voltage : - v ds [v] drain current : - i d (a) 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 t a = 25 c single pulse : 1unit rth(ch - a)(t) = r(t) rth(ch - a) rth(ch - a) = 89.3 c /w fig.15 normalized transient thermal resistance vs. pulse width pulse width : pw(s) normarized transient thermal resistance : r (t) 9/10 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6M11 ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. ? measurement circuits v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform v gs r g v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 10/10 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes

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